ds30148 rev. b-1 1 of 2 bav756dw bav756dw quad surface mount switching diode array case: sot-363, molded plastic terminals: solderable per mil-std-202, method 208 polarity: see diagram marking: kca weight: 0.006 grams (approx.) mechanical data a m j l f d b c h k c 1 a 2 a 1 a 1 c 2 c 2 kxx c 1 a 1 c 2 a 1 c 2 a 2 features sot-363 dim min max a 0.10 0.30 b 1.15 1.35 c 2.00 2.20 d 0.65 nominal e 0.30 0.40 g 1.80 2.20 h 1.80 2.20 j 0.10 k 0.90 1.00 l 0.25 0.40 m 0.10 0.25 all dimensions in mm fast switching speed ultra-small surface mount package for general purpose switching applications high conductance one bav70 circuit and one baw56 circuit in one package easily connected as f.w. bridge characteristic symbol bav756dw unit non-repetitive peak reverse voltage v rm 100 v peak repetitive reverse voltage working peak reverse voltage dc blocking voltage v rrm v rwm v r 75 v rms reverse voltage v r(rms) 53 v forward continuous current (note 1) i fm 300 ma average rectified output current (note 1) i o 150 ma non-repetitive peak forward surge current @ t = 1.0 s @ t = 1.0s i fsm 2.0 1.0 a power dissipation (note 1) p d 200 mw thermal resistance junction to ambient air (note 1) r ja 625 k/w operating and storage temperature range t j ,t stg -65 to +150 c maximum ratings @ t a = 25 c unless otherwise specified notes: 1. valid provided that terminals are kept at ambient temperature. characteristic symbol min max unit test condition maximum forward voltage v fm 0.715 0.855 1.0 1.25 v i f = 1.0ma i f = 10ma i f = 50ma i f = 150ma maximum peak reverse current i rm 2.5 50 30 25 a a a na v r = 75v v r = 75v, t j = 150 c v r = 25v, t j = 150 c v r = 20v junction capacitance c j 2.0 pf v r = 0, f = 1.0mhz reverse recovery time t rr 4.0 ns i f = i r = 10ma, i rr = 0.1 x i r ,r l = 100 electrical characteristics @ t a = 25 c unless otherwise specified marking indicates orientation new product
ds30148 rev. b-1 2 of 2 bav756dw new product 1 10 100 1000 10,000 0 100 200 i , leakage current (na) r t , junction temperature (c) fig. 2 leakage current vs junction temperature j v = 20v r 10 1.0 100 1000 0.1 0.01 012 i , instantane o us f o r ward current (ma) f v , instantaneous forward voltage (v) fig. 1 forward characteristics f
|
